▎ 摘　　要

NOVELTY - Graphene-enhanced silicon-germanium detector device (100) comprises source (105) and drain contacts, a graphene layer (120), a silicon germanium absorber layer (125), and an n+-silicon back gate having a thickness of 3 microns (mum) or less. The device further comprises a dielectric layer (135) and a gate oxide layer (130). The graphene layer comprises a graphene monolayer. The quantum dots have a core diameter of 5-20 nanometers (nm) and a cladding of higher energy gap and lower index of refraction material of 2.5-5.0 nm. USE - Graphene-enhanced SiGe detector for use in industrial, medical, telecommunication, and military applications. Uses include but are not limited to medical thermography for cancer and tumor detection, biochemical threat analysis, muzzle Flash (RTM: Computer multimedia application) and hostile mortar fire detection, and National Aeronautics and Space Administration (NASA) earth sciences applications. ADVANTAGE - The graphene has high mobility, high thermal conductivity, high Young's module, and a tunable work function. The graphene sheets can be combined with other type of absorbing materials to enhance and augment the internal device carrier transport and photosensitive properties of the detector devices. By using a material engineering process to choose appropriate layer materials and doping levels, the electron affinities and associated work functions of the layers are optimized to procure desired operation of the devices, enabling effective carrier transport through the layer interfaces and as measurable current output. The bandgap and the thickness of this layer largely impact the degree and spectral characteristics of the absorption properties, and thus the quantum efficiency or responsivity of the device. The SiGe devices can also be designed for acceptable operation at room temperature (300 Kelvin). This eliminates the need for external cooling components, potentially leading to significant reductions in size, weight, and power characteristics for the SiGe-based devices compared to Group III-V semiconductor-based detectors. The photocurrent is increased to dark current ratio, that is beneficial towards providing better responsivity, quantum efficiency, and bandwidth performance metrics. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of Graphene-SiGe based backside illuminated near infrared (NIR) photodetector with back gate. Graphene-SiGe detector device (100) Source (105) Graphene layer (120) SiGe absorber layer (125) Gate oxide (130) Dielectric layer (135)