▎ 摘　　要

NOVELTY - Narrow-band photoelectric detector with interface exciton comprises substrate, semiconductor exciton source layer located above the substrate for absorbing light signal and generating exciton under the excitation of forbidden band energy photons. The electrode comprises a first electrode (103) and a second electrode (104) which are opposite and independently set above the semiconducting excitation source layer. The interface barrier is set between the semiconductor exciton source layers (102) and first electrode and/or the second electrode. USE - The narrow-band photoelectric detector with interface exciton is useful in military defense, industrial production, national economy, scientific research, medical device and optical communication fields. ADVANTAGE - The detector has simple structure, is not disturbed by the specific structure of the device, regulates interface potential barrier between the electrode and semiconductor exciton source layer, and improves spectral response accuracy of photodetectors by recombination of short-lived non-exciton particles and separation of long-lived excitons with fixed energy to form electrical signals. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for manufacturing narrow-band photoelectric detector with interface exciton. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of narrow-band photoelectric detector with interface exciton. Sapphire substrate (101) Semiconductor exciton source layer (102) First electrode (103) Second electrode (104)