▎ 摘　　要

NOVELTY - Ferroelectric field effect transistor gas sensor, comprises a substrate (10), a gate (20) on the substrate, a ferroelectric dielectric layer (30) on the gate, a gas sensitive layer (40) on the ferroelectric dielectric layer, and a source electrode (50) and a drain electrode on the gas sensitive layer. A pulse gate voltage is applied to the gate to regulate the polarization direction and strength of the ferroelectric dielectric layer, thus realizing the regulation of the initial state of the gas sensitive layer and the gas desorption speed. USE - Ferroelectric field effect transistor gas sensor. ADVANTAGE - The sensor realizes room temperature, low power consumption, and fast response of the gas sensor. The sensor controls the polarization direction and intensity of the ferroelectric dielectric layer by the size of the pulse grid voltage, so as to realize the initial state of gas sensitive layer and the control of gas desorption speed. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: preparing ferroelectric field effect transistor gas sensor; and control method of ferroelectric field effect transistor gas sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view showing the structure of a ferroelectric field effect transistor gas sensor. 10Substrate 20Gate 30Ferroelectric dielectric layer 40Gas sensitive layer 50Source electrode 60Drain electrode