• 专利标题:   Method for manufacturing nanometer cantilever beam with recoverable deformation, involves developing and fixing cantilever beam structure to be developed to obtain cantilever beam structure corresponding to cantilever beam structure diagram and irradiating cantilever beam housing.
  • 专利号:   CN114715837-A
  • 发明人:   QIN N, TAO H
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   B81C001/00, B82Y040/00
  • 专利详细信息:   CN114715837-A 08 Jul 2022 B81C-001/00 202262 Chinese
  • 申请详细信息:   CN114715837-A CN11530038 22 Dec 2020
  • 优先权号:   CN11530038

▎ 摘  要

NOVELTY - The method involves providing (102) a substrate. The photolithography material is mounted (104) on the substrate to form a thin film corresponding to the size of the cantilever beam. The cantilever beam is provided with a cantilever beam housing and a supporting column connected to each other. The cantilever beam housing area and the support column area set in the film are subjected (106) to electron beam three-dimensional direct writing exposure using electron beams to obtain the cantilever beam structure to be developed based on the pre-input cantilever beam structure diagram. The cantilever beam structure to be developed is developed and fixed to obtain a cantilever beam structure corresponding to the cantilever beam structure diagram. The cantilever beam housing in the cantilever beam structure is irradiated and deformed (108) by electrons. USE - Deformation-recoverable nano-cantilever fabrication method with recoverable deformation. ADVANTAGE - The protein nano cantilever beam is prepared by direct writing of electron beam, it will not introduce pollution problem of impurity ion, by changing different accelerating and exposure dose, changing the depth of the electron beam incident cantilevered beam, and can realize cantilevver beam bending-recovering behavior under the driving of energy minimization. By controlling accelerating voltage, combining the working distance, dynamically adjusting the exposure focus of the beam, realizing the beam three-dimensional direct write exposure in the film to obtain the beam structure to be developed. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for manufacturing a nanometer cantilever beam with recoverable deformation. (Drawing includes non-English language text) Step for providing a substrate (102) Step for mounting photolithography material on the substrate to form a thin film corresponding to the size of the cantilever beam and providing the cantilever beam with a cantilever beam housing and a supporting column connected to each other (104) Step for subjecting cantilever beam housing area and the support column area set in the film to electron beam three-dimensional direct writing exposure using electron beams to obtain the cantilever beam structure to be developed based on the pre-input cantilever beam structure diagram (106) Step for developing and fixing cantilever beam structure to be developed to obtain a cantilever beam structure corresponding to the cantilever beam structure diagram and irradiating and deforming the cantilever beam housing in the cantilever beam structure by electrons (108)