▎ 摘　　要

NOVELTY - An integrated circuit comprises a ribtan layer on a substrate. The ribtan layer is patterned to define functional structure(s). The substrate is made of one or more materials from an insulator, silicon, germanium, silicon germanide, gallium arsenide, diamond, silicon carbide, indium arsenide, indium phosphide, silicon germanium carbide, gallium arsenic phosphide, gallium indium phosphide, plastics, glasses, ceramics, metal-ceramic composites, and/or metals. The substrate further comprises doped regions, circuit features, multilevel interconnects, and patterned ribtan layer(s). USE - An integrated circuit. ADVANTAGE - The integrated circuit utilizes a ribtan technology which allows high volume production of ribtan layers over large surface (from several square millimeters to several square meters or larger). The ribtan technology allows low-cost manufacturing of the ribtan material for a broad range of different electronic devices including the integrated circuits. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a method of lithography patterning, comprising forming a ribtan layer by applying a solution on a substrate, drying with formation of a solid precursor layer, and annealing with formation of an electrical-conducting ribtan layer comprising graphene-like carbon-based structures; and forming a patterned electrical-conducting ribtan layer by lithography by forming a resist layer on the electrical-conducting ribtan layer, forming a pattern in the resist layer, and transferring the pattern from the resist layer to the electrical-conducting ribtan layer; (2) a method of thermal patterning, comprising applying the solution on the substrate; drying with formation of the solid precursor layer; and forming a pattern in the solid precursor layer by a local annealing; and (3) a method of direct lithographic patterning, comprising depositing a wet pattern on the substrate using the solution; drying the wet pattern with the formation of a solid pattern; and annealing with the formation of the solid pattern comprising graphene-like carbon-based structures and possessing electrical-conductivity. The solution comprises at least one pi -conjugated organic compound of formula (CC-Ap)-(S1)m1(S2)m2(S3)m3(S4)m4 (I) or a combination of organic compounds of formula (I). The annealing or local annealing is defined by a level of vacuum, composition and pressure of ambient gas, time dependence of annealing temperature and duration of exposure which are selected to ensure (1) partial pyrolysis of the organic compound(s) with at least partial removal of hetero-atomic groups and substituents from the layer, and (2) fusion of carbon-conjugated residues to form predominantly planar graphene-like carbon-based structures. CC=predominantly planar carbon-conjugated core; A=hetero-atomic group; p, m1-m4=0, 1, 2, 3, 4, 5, 6, 7, or 8; S1-S4=substituents; and (m1+m2+m3+m4)=1, 2, 3, 4, 5, 6, 7, or 8.