▎ 摘　　要

NOVELTY - Preparation of metal oxide-metal compound/graphene core-shell semiconductor material by preparing metal oxide nanosphere from metal salt dissolved in ethylene glycol, preparing metal oxide composite metal/graphene, and placing the metal oxide/graphene composite material and semiconductor powder in a quartz boat, and then putting the quartz boat into a tubular furnace, and introducing hydrogen; heating the tubular furnace, calcining in hydrogen atmosphere, and naturally cooling to room temperature to obtain the metal oxide-metal compound/graphene core-shell semiconductor material. USE - Method for preparing metal oxide-metal compound/graphene core-shell semiconductor material for use as cathode material of lithium ion battery or sodium ion battery cathode material (claimed). ADVANTAGE - The method can prepare metal oxide-metal compound/graphene core-shell semiconductor material having a heterojunction interface effect. DETAILED DESCRIPTION - Preparation of metal oxide-metal compound/graphene core-shell semiconductor material comprises: (A) dissolving a metal salt in ethylene glycol, stirring at 600-1000 revolutions/minute, reacting for 10-60 minutes, obtaining mixed solution, transferring the mixed solution to a reaction kettle at 120-240 degrees C, reacting for 6-10 hours, and naturally cooling to room temperature, and obtaining the reaction product I, where the mass ratio of the metal salt to ethylene glycol is (0.5-10 g):(30-100 ml); cleaning with deionized water, centrifuging at 6000-9000 revolutions/minute, centrifugal washing three times the reaction product I ( where each time is 2-8 minutes), washing the obtained reaction product I in the deionized water, then taking absolute ethanol as cleaning agent, centrifuging at 6500-9500 revolutions/minute, washing the reaction product I in deionized water for three times, where centrifuging and washing time is 3-10 minutes each time, and drying at 50-60 degrees C for 20-28 hours to obtain metal oxide nanosphere; (B) dissolving the metal oxide nanosphere in the deionized water, adding 2-5 mg/ml graphite oxide solution, ultrasonically dispersing at 20-60 W for 30-90 minutes, adding 0.3-0.7 mg/ml hexadecyl trimethyl ammonium bromide solution, stirring at 600-1000 revolutions/minute and reacting for 60-180 minutes, vacuum drying at 50-70 minutes for 20-28 hours to obtain the reaction product II, setting the reaction product II in a tubular furnace, and introducing argon gas into the tubular furnace, heating the tubular furnace at 400-800 degrees C under the protection of argon atmosphere for 0.5-6 hours and naturally cooling to room temperature to obtain the metal oxide/graphene composite material; where the mass volume ratio of the metal oxide nanosphere to water is (5-40 mg):(5-80 ml); the mass volume ratio of the 0.5-20 mg/ml metal oxide nanosphere to graphite oxide solution is (5-40 mg): 40 ml; the mass volume ratio of the 0.3-0.7 mg/ml metal oxide nanosphere to hexadecyl trimethyl ammonium bromide solution is (5-40 mg):10 ml; and (C) placing the metal oxide/graphene composite material and semiconductor powder in the quartz boat, and then putting the quartz boat into a tubular furnace, and introducing hydrogen; increasing the temperature at 1-3 degrees C/minute, heating the tubular furnace at 200-550 degrees C, calcining for 2 hours at 200-500 degrees C in hydrogen atmosphere for 10 hours, and naturally cooling to room temperature to obtain the metal oxide-metal compound/graphene core-shell semiconductor material; where the semiconductor powder is sulfur powder or selenium; the mass ratio of the metal oxide/graphene composite material to the semiconductor powder is (10-80):(5-80); and the hydrogen flows at 5-30 standard cubic centimeter per minute.