▎ 摘　　要

NOVELTY - Resistance random memory device comprises upper electrode formed with graphene layer; and bottom electrode having oxide layer. USE - Resistance random memory device. ADVANTAGE - The device has reduced area by using redox reaction between oxide layer and graphene layer. It has excellent high temperature retention. DESCRIPTION OF DRAWING(S) - The drawing is a schematic view of the device. Bottom electrode (10) Oxide layer (20) Graphene layer (30)