▎ 摘　　要

NOVELTY - The manufacture method involves forming a graphene film on a catalytic layer (14), removing a part of the graphene film to form an exposed side surface of the graphene film, and introducing dopant into the graphene film from the exposed side surface. A graphene interconnect (15a) is formed by patterning the graphene film into which the dopant is introduced. USE - Manufacture method of semiconductor device (claimed). ADVANTAGE - Prevents the escape of the dopant from the graphene film so as to obtain a graphene interconnect having low resistance. Prevents the possibility of decreasing the efficiency of introducing the dopant into the graphene film by etching the upper portion of the catalytic layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic illustration of the sectional view of a part of the method of manufacturing a semiconductor device. Interlayer insulating film (11) Contact (12) Underlying conductive layer (13) Catalytic layer (14) Graphene interconnect (15a) Hardmask (16)