▎ 摘　　要

NOVELTY - The structure has electrode pads provided with a source electrode pad, a drain electrode pad and a gate electrode pad. A gallium nitride-based HEMT device is provided with an epitaxial layer structure and the gate electrode, the source electrode and the drain electrode. The gallium nitride-based HEMT device is adhesively connected to a substrate e.g. silicon carbide substrate and sapphire substrate through the electrode pad to realize a flip packaging structure, where a graphene material is utilized as a heat dissipating material on the substrate material of the flip of the gallium nitride-based HEMT device. The substrate is made of aluminum nitride or aluminum oxide material. USE - Graphite radiating layer integrated flip structure gallium nitride based power device. ADVANTAGE - The device can connect the HEMT device with the radiating film through an electrode pad, so that a graphene is utilized as a heat radiating layer on the inverted structure in the HEMT substrate, thus improving heat dissipation efficiency of the device and long-term reliability of the lifting device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphite radiating layer integrated flip structure gallium nitride based power device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphite radiating layer integrated flip structure gallium nitride based power device.