石墨烯知识资源中心

专利标题: Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.
专利号: US2010032409-A1, JP2010041023-A, CN101643199-A, DE102008060644-A1, KR2010016929-A, KR975641-B1, DE102008060644-B4, JP4825863-B2, US8343366-B2, CN101643199-B
发明人: HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T
专利权人: UNIV SEOUL NAT RES DEV BUSINESS FOUND, UNIV SEOUL ACAD IND COLLABORATION GROUP, SNU R DB FOUND, SNU R DB FOUND, SNU R DB FOUNDATON, UNIV SEOUL NAT IND FOUND, SNU R DB FOUND, UNIV SEOUL NAT R DB FOUND, SNU R DB FOUND
国际专利分类: B44C001/22, B82B003/00, C01B031/02, H01L021/28, H01L021/306, H01L021/3065, H01L021/3205, H01L021/3213, H01L023/52, H01L029/06, H01L021/027, H01L021/308, C01B031/04
专利详细信息: US2010032409-A1 11 Feb 2010 B44C-001/22 201013 Pages: 11 English
申请详细信息: US2010032409-A1 US211006 15 Sep 2008
优先权号: KR076585

▎ 摘　　要

NOVELTY - The method involves forming oxide nanostructure on a graphene layer (360) in arbitrary direction, and aligning the oxide nanostructure in predetermined direction on the graphene layer. Anisotropic etching is performed by using the aligned oxide nanostructure as a mask. A remaining oxide nanostructure is removed after anisotropic etching. The graphene layer is formed on a substrate (350). A metal layer is formed on the graphene layer, and a molecule layer pattern is formed in region on the metal layer. USE - Method for fabricating a graphene nanostructure in a semiconductor device. ADVANTAGE - The anisotropic etching is performed by using the aligned oxide nanostructure as the mask, and the remaining oxide nanostructure is removed after anisotropic etching, thus allowing to practically realize a graphene semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a method for fabricating a graphene structure. Substrate (350) Graphene layer (360)