▎ 摘　　要

NOVELTY - Preparing directly layer of controllable graphene on insulating substrate comprises (i) forming insulating substrate on first metal layer; (ii) injecting carbon ions into the first metal layer; (iii) forming second metal layer on the surface of first metal layer, where both layers are miscible at high temperature; (iv) carrying out annealing process in first metal layer and the second metal layer are mutually miscible to form alloy, thus ejecting carbon ions from first metal layer to the surface of the insulating substrate to form graphene layer; and (v) removing alloy. USE - The method is useful for preparing directly layer of controllable graphene on insulating substrate (claimed). ADVANTAGE - The method produces high quality continuous graphene controlling large number of layers directly on different insulating substrates, thus greatly improved the quality of graphene. The method is simple and shortens the production time.