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  • 专利标题:   Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.
  • 专利号:   CN104975344-A
  • 发明人:   CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C30B025/18, C30B029/02
  • 专利详细信息:   CN104975344-A 14 Oct 2015 C30B-029/02 201611 Pages: 7 Chinese
  • 申请详细信息:   CN104975344-A CN10401391 09 Jul 2015
  • 优先权号:   CN10401391

▎ 摘　　要

NOVELTY - Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density. USE - Method for preparing graphene single crystal (claimed). ADVANTAGE - The method enables to prepare graphene single crystal in simple and feasible manner that has increased crystal size, reduced crystal boundary and electrical property.