▎ 摘　　要

NOVELTY - The method involves providing a metal substrate (1). The molten metal layer is contacted with a carbon source gas to form a graphene-comprising layer covering the molten metal layer of the top surface of the metal substrate. The molten metal layer is solidified. The metal substrate having the graphene-comprising layer is advanced out of a processing chamber (2). The graphene-comprising layer is separated to form a film comprising graphene. USE - Continuous method for preparing film comprising graphene. ADVANTAGE - The direct synthesis of the uniform layer of graphene directly on the molten metal layer of the substrate is facilitated. The high quality, uniform, large surface area layer comprising graphene is produced effectively. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a film. The metal substrate is provided with a metal foil or a metal film. The processing chamber is provided with a preheating zone comprising the heating elements. The processing zone IS provided with gas supply components, and a cooling zone. The molten metal layer is formed as the metal substrate advances through the preheating zone. The molten metal layer is contacted with the carbon source gas in the processing zone. The molten metal layer is solidified in the cooling zone. The metal substrate is advanced from an unwinding roll into the processing chamber. The metal substrate with the graphene-comprising layer is wound onto a winding roll after advanced out of the processing chamber. The heating elements are provided with a first heating element to heat the top surface of the metal substrate and a second heating element to heat a bottom surface of the metal substrate. The metal substrate is provided with metal foil. The metal foil is provided with a thickness in preset range. The molten metal layer is provided with a thickness of between about 200 nm and 800 nm. The molten metal layer is provided with a thickness such that the solutal Marangoni number (Ma) is lower than the critical number. The metal film is deposited on a second substrate. The first heating element is provided to heat the top surface of the metal substrate to no more than about 50 degrees C different than the melting point of the top surface of the metal substrate. The first and second heating elements are provided with an IR heater. The second heating element is provided to heat the bottom surface of the metal substrate to a temperature that is below the melting point of the bottom surface of the metal substrate. The film has a metal substrate that is continuously advanced into and through a processing chamber comprising heating elements and gas supply components. The metal substrate is heated to form a molten metal layer on a top surface of the metal substrate. The molten metal layer is contacted with a carbon source gas to form a graphene-comprising layer covering the molten metal layer of the top surface of the metal substrate. The molten metal layer is solidified. The metal substrate having the graphene-comprising layer is advanced out of the processing chamber. The graphene-comprising layer is separated to form a film comprising graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the processing chamber. Metal substrate (1) Processing chamber (2) Heating element (3) Unwinding roll (8) Guide roll (9,10)