• 专利标题:   Forming pattern in substrate material involves positioning layer of covalent organic framework polymer that includes nanoscale pores therein over the substrate material as a template having nanoscale pores.
  • 专利号:   US2021122638-A1, US11685657-B2
  • 发明人:   WHITE D, STAR A
  • 专利权人:   UNIV PITTSBURGH COMMONWEALTH SYSTEM HIGH
  • 国际专利分类:   C01B032/194, C09K013/00, B82Y030/00, B82Y040/00
  • 专利详细信息:   US2021122638-A1 29 Apr 2021 C01B-032/194 202149 English
  • 申请详细信息:   US2021122638-A1 US078353 23 Oct 2020
  • 优先权号:   US925553P, US078353

▎ 摘  要

NOVELTY - Forming a pattern in a substrate material involves positioning a layer of a covalent organic framework polymer that includes nanoscale pores therein over the substrate material as a template having nanoscale pores therein to form a templated assembly and applying an etching process to the templated assembly. USE - Method for forming pattern in substrate material. ADVANTAGE - The method has improved onset potential for the multi-metallic GNC composite (NiFe) over the single metal (Ni). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a composition, which comprises a layer of a covalent organic framework polymer comprising nanoscale pores over a substrate material and different from the COF.