▎ 摘　　要

NOVELTY - The method involves forming an insulating substrate. Surface pretreatment is performed on the insulating substrate. A graphene layer is placed on a surface of the insulating substrate. Chemical vapor deposition is performed a surface of a graphene quantum dot array. Oxidation annealing treatment is performed. The insulating substrate deposited on the graphene quantum dot array is annealed to remove an intermediate graphene quantum dot array. A semi-finished product is placed into a magnetron sputtering device. Metal oxide is selected from titanium dioxide, zinc oxide, tin dioxide and indium oxide. USE - Method for manufacturing a SERS substrate based on graphene quantum dot array (claimed). ADVANTAGE - The method enables increases a specific surface area and enhances a signal strength of the detected molecule.