• 专利标题:   Graphene-based micro-metering heat radiation measuring instrument, has semiconductor silicon chip formed with silicon substrate that is formed with hanging hole, and hanging support layer whose upper surface is formed with air placing hole.
  • 专利号:   CN105486414-A
  • 发明人:   DU C, FENG S, SHI H, YANG J, WEI X, TANG L
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   G01J005/20, H01L031/09
  • 专利详细信息:   CN105486414-A 13 Apr 2016 G01J-005/20 201637 Pages: 7 English
  • 申请详细信息:   CN105486414-A CN10975460 23 Dec 2015
  • 优先权号:   CN10975460

▎ 摘  要

NOVELTY - The instrument has a semiconductor silicon chip formed with a silicon substrate (101) that is formed with a hanging hole (102). An upper surface of a hanging support layer (103) is formed with an air placing hole. The hanging support layer is made of silicon nitride material. An infrared sensitive layer (105) is made of silicon dioxide material and elastomeric polymer material. The infrared sensitive layer is formed on an upper part of the hanging support layer. Thickness of a graphite alkene part is about 5nm to 1000nm. USE - Graphene-based micro-metering heat radiation measuring instrument. ADVANTAGE - The instrument is simple in structure and inexpensive, and improves infrared detecting sensitivity of the infrared sensitive layer. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene-based micro-metering heat radiation measuring instrument. Silicon substrate (101) Hanging hole (102) Hanging support layer (103) Metal electrode down-lead part (104) Infrared sensitive layer (105)