▎ 摘　　要

NOVELTY - The FET has a source electrode and a drain electrode respectively distributed on two sides of a channel layer. The channel layer is made of AB stacking dual-layer graphene or AB stacking multi-layer graphene. A first gate electrode and a first gate dielectric layer are located on a side of the channel layer. A second gate electrode and a second gate dielectric layer are located on another side of the channel layer. The first gate electrode comprises multiple spaced sub-electrodes. Each sub-electrode and the second gate electrode are formed with longitudinal electric field vertical to the channel layer. USE - Graphene FET. ADVANTAGE - The FET improves device output resistance to improve on-off ratio so as to ensure better radio frequency performance. DESCRIPTION OF DRAWING(S) - The drawing shows a partial sectional view of a graphene FET.