• 专利标题:   Preparation of porous graphene microchip, involves adding surfactant and pore forming agent, placing resulting solid under protected atmosphere of nitrogen and purifying resulting product by dilute acid or alkali.
  • 专利号:   CN105449210-A
  • 发明人:   DAI T, LI F, SONG H, ZHOU P, ZHAO D
  • 专利权人:   FUJIAN XIANGFENGHUA NEW ENERGY MATERIAL
  • 国际专利分类:   H01M010/0525, H01M004/133, H01M004/1393, H01M004/583
  • 专利详细信息:   CN105449210-A 30 Mar 2016 H01M-004/583 201651 Pages: 5 English
  • 申请详细信息:   CN105449210-A CN10794125 18 Nov 2015
  • 优先权号:   CN10794125

▎ 摘  要

NOVELTY - Preparation of porous graphene microchip, involves adding graphite into a mixed solution of oxidant and intercalation agent, washing the obtained product, and placing in a muffle furnace in a nitrogen atmosphere to obtain expanded graphite product for future use, adding surfactant and a certain amount of pore forming agent, placing the resulting solid under protected atmosphere of nitrogen at 600-1200 degrees C, purifying the resulting product by dilute acid or alkali, washing repeatedly with water, drying in a vacuum oven at a temperature of 30-50 degrees C to obtain a porous graphene microchip. USE - Preparation of porous graphene microchip (claimed). ADVANTAGE - The high specific surface area of the porous graphene microchip is 850-1000 m2/g. The porous structure is beneficial to improve the diffusion rate of lithium ion and has better electrochemical performance. DETAILED DESCRIPTION - Preparation of porous graphene microchip, involves adding graphite into a mixed solution of the oxidant and the intercalation agent at 20-60 degrees C, subjecting to ultrasonic stirring treatment for 3-5 hours, washing the obtained product, filtering, drying and placing in a muffle furnace in a nitrogen atmosphere and treating at 600-1200 degrees C for 2-6 hours to obtain expanded graphite product for future use, dissolving the expanded graphite in an amount of deionized water, adding 0.1-2 wt.% surfactant, performing ultrasonic agitation for 0.5-2 hours, adding a certain amount of pore forming agent, continuing ultrasonic stirring for 1-5 hours, evaporating the solvent at a temperature of 100 degrees C, placing the resulting solid in a muffle furnace under protected atmosphere of nitrogen at 600-1200 degrees C and heat treating for 1-3 hours, purifying the resulting product by dilute acid or alkali, washing repeatedly with deionized water, drying in a vacuum oven at a temperature of 30-50 degrees C for 2-6 hours to obtain a porous graphene microchip. The mass ratio of pore forming agent and expanded graphite is (0.1-1):1.