▎ 摘　　要

NOVELTY - The method involves forming a sacrificial layer (120) such as hexagonal boron nitride film on a growth substrate (110). A first graphene layer is grown on the sacrificial layer using a chemical vapor deposition (CVD) method using methane. Another graphene layer (131) is grown on the growth substrate by removing the portion of the sacrificial layer. USE - Method of forming multilayer graphene structure (claimed) for use in nanoelectronics, optoelectronics and chemical sensors. ADVANTAGE - The masking pattern is removed using one etchant that selectively removes the masking pattern without removing the graphene structures. The growth substrate functions as a catalyst for growing graphene. DESCRIPTION OF DRAWING(S) - The drawing shows the front view of the multilayer graphene structure. Growth substrate (110) Sacrificial layer (120) Sacrificial film (121) First graphene layer (131) Second graphene layer (132)