▎ 摘　　要

NOVELTY - The process of manufacturing a structure comprising a semiconductor substrate (81) and a modified graphene layer (83), comprises supplying an initial structure comprising a standard graphene layer (82), and hydrogenating the initial structure with an exposure dosage (200-500 langmuirs) of given atomic hydrogen gas (85) by depositing hydrogen atoms on the initial structure. The hydrogen atoms are subjected to a heat treatment comprising annealing (86) at 200-400 degrees C for 1-20 minutes. The initial structure is subjected to oxidation, before hydrogenation. USE - The process is useful for manufacturing a structure comprising a semiconductor substrate and a modified graphene layer, where the structure is useful in microelectronic industry. ADVANTAGE - The process ensures simple, economical and industrial manufacture of a semiconductor structure with high quality, improved electron mobility and other mechanical, electrical and electronic properties and without any constraints. DETAILED DESCRIPTION - The process of manufacturing a structure comprising a semiconductor substrate (81) and a modified graphene layer (83), comprises supplying an initial structure comprising a standard graphene layer (82), and hydrogenating the initial structure with an exposure dosage (200-500 langmuirs) of given atomic hydrogen gas (85) by depositing hydrogen atoms on the initial structure. The hydrogen atoms are subjected to a heat treatment comprising annealing (86) at 200-400 degrees C for 1-20 minutes. The initial structure is subjected to oxidation, before hydrogenation, to induce an open gap in the graphene layer and form the defects, and comprises electronic trap such as critical defects between the substrate and the graphene layer. INDEPENDENT CLAIMS are included for: (1) a process for hydrogenation of a modified graphene layer present on the substrate; and (2) a structure comprising a semiconductor or insulating substrate. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a process for manufacturing a semiconductor structure. Substrate (81) Standard graphene layer (82) Modified graphene layer (83) Hydrogen gas (85) Annealing. (86)