▎ 摘　　要

NOVELTY - Semiconductor device (1A) comprises a substrate (101), a first passivation layer (105) positioned above the substrate, a redistribution layer (201) positioned on the first layer, a first adjustment layer (301) on the redistribution layer, a pad layer (203) on first layer, and a second adjustment layer (303) between the pad layer and first layer. The first and second adjustment layers are formed of graphene. The pad layer comprises a lower portion on first and an upper portion on the lower portion. The second layer is on sidewalls of lower portion and on bottom surfaces of upper portion of pad layer. The barrier layer (401) is between redistribution and first adjustment layers. USE - Semiconductor device for use in a variety of electronic applications. Uses include but are not limited to personal computers, cellular telephones, digital cameras, and other electronic equipment. ADVANTAGE - Due to the design of the semiconductor device, the first adjustment layer and the second adjustment layer may reduce the resistance between the pad layer and redistribution layer, thus, the power consumption of the device may be decreased, and the performance of the devices may be improved. The graphene layer may be formed on the redistribution layer to reduce or prevent the resistance of the redistribution layers from being increased, and thus, improving the performance and reliability of the graphene layer. The first and second adjustment layers are formed of graphene, which may have a high porosity, and may be used to reduce the resistivity between the redistribution and the pad layers, thus improving the reliability and performance of semiconductor devices with the graphene layers, and improving the quality, yield, performance, and reliability and reduced complexity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for fabricating a semiconductor device, which involves: (a) providing a substrate; (b) forming a redistribution layer above the substrate; (c) forming a first adjustment layer on the redistribution layer; (d) forming a second adjustment layer on the first adjustment layer; and (e) forming a pad layer on the second adjustment layer, where the first adjustment layer and the second adjustment layer are formed of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of semiconductor device. Semiconductor device (1A) Substrate (101) Passivation layer (105) Redistribution layer (201) Pad layer (203) First adjustment layer (301) Second adjustment layer (303) Barrier layer (401)