• 专利标题:   Growing single-crystal graphene using single crystal copper foil with any index surface, by preparing single crystal copper foil, selecting single crystal copper foil as substrate, and growing crystal graphene on single crystal copper foil.
  • 专利号:   CN111690982-A
  • 发明人:   LIU K, ZHANG Z, YU D, WANG E
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   C30B029/02, C30B025/10, C30B025/18
  • 专利详细信息:   CN111690982-A 22 Sep 2020 C30B-029/02 202086 Pages: 9 Chinese
  • 申请详细信息:   CN111690982-A CN10179967 11 Mar 2019
  • 优先权号:   CN10179967

▎ 摘  要

NOVELTY - Method for growing single-crystal graphene using single crystal copper foil with any index surface, involves (a) preparing single crystal copper foil with any index surface, and (b) selecting single crystal copper foil as substrate, and growing high-quality oversized single crystal graphene on single crystal copper foil. USE - Method for growing single-crystal graphene using single crystal copper foil with any index surface (claimed). ADVANTAGE - The method ensures grown continuous large-size single crystal graphene, and the graphene has high-quality and super-sized effect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a single-crystal graphene prepared using above-mentioned method.