▎ 摘　　要

NOVELTY - Forming a graphene layer including at least one graphene monolayer, comprises: forming a semiconductor-carbon alloy layer on a semiconductor substrate; converting the semiconductor-carbon alloy layer into a semiconductor carbide layer by a first anneal; and converting an exposed top portion of the semiconductor carbide layer into a graphene layer including at least one graphene monolayer by a second anneal. USE - The method is useful for forming a graphene layer including at least one graphene monolayer (claimed). ADVANTAGE - The method efficiently forms an improved graphene layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is a semiconductor structure comprising: a semiconductor substrate comprising a single crystalline silicon-containing semiconductor material; a semiconductor carbide layer located on the semiconductor substrate and having a thickness less than 10 nm; and a graphene layer consisting of a number of graphene mono-layers and abutting the semiconductor carbide layer, where the number is greater than or equal to 1 and less than or equal to 4, and where the graphene layer has a (0001) crystalline orientation along a surface normal of a top surface of the semiconductor substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a vertical cross-sectional view of a semiconductor structure after conversion of top portions of the semiconductor carbide layer into at least one graphene layer through a second anneal. Semiconductor substrate (10) Embedded dielectric material portions (12) Top semiconductor layer (20) Buried insulator layer (22) Patterned overlying dielectric material portions (32) Semiconductor carbide layer (50) Horizontal graphene layer (60) Non-horizontal graphene layer (62)