• 专利标题:   Preparing nitrogen-doped graphene useful for preparing electrical devices, comprises heating a catalyst under non-oxidizing atmosphere, inletting carbon and nitrogen source in the reactor to react, and processing chemical vapor deposition.
  • 专利号:   CN102605339-A, CN102605339-B
  • 发明人:   CHEN J, GENG D, HUANG L, LIU Y, WU B, XUE Y, YU G
  • 专利权人:   CHINESE ACAD SCI CHEM INST
  • 国际专利分类:   C23C016/26, C23C016/44
  • 专利详细信息:   CN102605339-A 25 Jul 2012 C23C-016/26 201277 Pages: 13 Chinese
  • 申请详细信息:   CN102605339-A CN10042207 22 Feb 2012
  • 优先权号:   CN10042207

▎ 摘  要

NOVELTY - Preparing nitrogen-doped graphene comprises placing a metal catalyst in a reactor, heating the catalyst at 200-600 degrees C under non-oxidizing atmosphere, inletting carbon and nitrogen source in the reactor to react, and processing chemical vapor deposition to obtain the nitrogen-doped graphene. USE - The nitrogen-doped graphene is useful for preparing electrical devices (claimed). ADVANTAGE - The method is simple, economical and environment-friendly, and is suitable for large-scale production. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the nitrogen-doped graphene prepared by above mentioned method.