• 专利标题:   Manufacturing method of patterned graphene used in graphene-based device, involves forming metal catalytic layer on substrate, and growing graphene layer on portion in which metal catalytic layer is not formed.
  • 专利号:   KR1174670-B1
  • 发明人:   LEE S S, JUNG D S, AN K S, PARK B K, LEE Y K, KIM C G, CHUNG T M, SHIN Y S, JEONG S J
  • 专利权人:   KOREA RES INST CHEM TECHNOLOGY
  • 国际专利分类:   H01L021/027, H01L029/786
  • 专利详细信息:   KR1174670-B1 17 Aug 2012 H01L-021/027 201259 Pages: 9
  • 申请详细信息:   KR1174670-B1 KR045313 13 May 2011
  • 优先权号:   KR045313

▎ 摘  要

NOVELTY - The method involves forming the metal catalytic layer on the substrate. The graphene layer is formed above the metal catalytic layer. The graphene layer is grown over the substrate. The graphene layer is grown on the portion in which the metal catalytic layer is not formed. The grown graphene layer is provided in the insulating layer. The metal catalytic layer is formed of nickel, molybdenum, platinum, palladium, iron and titanium. USE - Manufacturing method of patterned graphene used in graphene-based device (claimed). ADVANTAGE - The manufacturing process of patterned graphene can be simplified. The manufacturing cost of patterned graphene can be reduced. The graphene based device can be manufactured easily. DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view illustrating the manufacturing process of patterned graphene.(Drawing includes non-English language text)