▎ 摘　　要

NOVELTY - Nonvolatile memory device 720 comprises resistance switching layer having resistance value. The resistance switching layer 725 is configured to change resistance value based on illumination of light irradiated. The resistance switching layer is configured to maintain changed resistance value. The gate 723 is on resistance switching layer. The gate oxide layer 724 is between resistance switching layer and gate. The source 721 and drain 722 are spaced part from each other, on resistance switching layer. USE - Nonvolatile memory device. ADVANTAGE - The nonvolatile memory device increases lower resistance state. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: 1. a method for performing operation using crossbar array comprising multiple nonvolatile memory devices, which involves: a. applying off-voltage to gate of each of multiple nonvolatile memory devices; b. changing resistance value of resistance switching layer of each of multiple nonvolatile memory devices by irradiating light having illumination corresponding to multiple elements to multiple nonvolatile memory devices; c. applying gate off-voltage to row of crossbar array, and obtaining source current from each column of crossbar array; 2. a method for recognizing image using crossbar array comprising multiple nonvolatile memory devices, which involves: a. applying off-voltage to gate of each of multiple nonvolatile memory devices; b. shifting window by stride on image and irradiating light having illumination corresponding to image included in window to each column of crossbar array; c. performing pooling operation by applying gate off-voltage to row of crossbar array and obtaining first source current from each column of crossbar array; d. resetting multiple nonvolatile memory devices by applying on-voltage to gate of each of multiple nonvolatile memory device; e. applying off-voltage to gate of each of reset multiple nonvolatile memory devices; f. irradiating light having illumination corresponding to multiple weights included in specific layer of neural network to multiple nonvolatile memory devices; g. performing fully-connected convolution operation by applying, as drain voltage, voltage corresponding to first source current to row of crossbar array and obtaining second source current from each column of crossbar array; h. recognizing image based on second source current; 3. a non-transitory computer-readable recording medium having recorded program, which when executed by computer, causes computer to recognize image using crossbar array. DESCRIPTION OF DRAWING(S) - The drawing shows side view of nonvolatile memory device. Nonvolatile memory device (720) Source (721) Drain (722) Gate (723) Gate oxide layer (724) Resistance switching layer (725)