▎ 摘　　要

NOVELTY - Preparing ferromagnetic/graphene epitaxial interface involves growing ferromagnetic film with hexagonal symmetrical lattice properties on insulating substrate, insulating substrate is same as ferromagnetic film base with uniform lattice symmetry. The ferromagnetic film is sequentially annealed and surface reduced to obtain active single crystal film. The active single crystal film is placed in plasma chemical vapor deposition system, and precursor containing carbon source is introduced under the conditions of 550-850 degrees C and plasma power of 50-100 watt with the induction of surface potential energy of active single crystal film, graphene is epitaxially grown on active single crystal film. The plasma is turned off and entrance of the precursor is stopped, and cooled down to obtain ferromagnetic/graphene epitaxial interface. USE - Method for preparing ferromagnetic/graphene epitaxial interface. ADVANTAGE - The method enables to prepare ferromagnetic/graphene epitaxial interface that has strong interface bonding force.