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  • 专利标题:   Manufacturing method of graphene involves growing copper single crystal film on spinel single crystal plane substrate, and growing graphene by chemical vapor deposition method with carbon-containing source gas.
  • 专利号:   JP2014055086-A
  • 发明人:   NOZAWA K, YOSHII S
  • 专利权人:   PANASONIC CORP
  • 国际专利分类:   B01J023/72, C01B031/02, H01L021/336, H01L029/06, H01L029/786, H01L051/05, H01L051/30, H01L051/40
  • 专利详细信息:   JP2014055086-A 27 Mar 2014 C01B-031/02 201424 Pages: 13 Japanese
  • 申请详细信息:   JP2014055086-A JP201157 13 Sep 2012
  • 优先权号:   JP201157

▎ 摘　　要

NOVELTY - Graphene (104) is manufactured by growing copper single crystal film on spinel single crystal (111) plane substrate (101) having magnesium (Mg) and aluminum (Al) coordinated in a ratio of 1:2 between oxygen as catalyst, and growing graphene by chemical vapor deposition (CVD) method with carbon-containing source gas. USE - Manufacturing method of graphene for forming transistor (claimed) and preparing electronic device. ADVANTAGE - Graphene growth is large and uniform. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating the growth procedure. (Drawing includes non-English language text). Substrate (101) Metal film (102) Single crystal metal film (103) Graphene (104)