▎ 摘　　要

NOVELTY - The detector has a CMOS infrared sensing structure comprising a CMOS measuring circuit system (1) and a CMOS infrared sensing structure (2). The CMOS measuring circuit system and the CMOS infrared sensing structure are both prepared by using a CMOS process. The CMOS infrared sensing structure is directly prepared on the CMOS measuring circuit system. The CMOS measurement circuit system comprises layer of closed release isolation layer (3) above the CMOS measurement circuit system. The closed release isolation layer is used for protecting the CMOS measurement circuit system from influenced by a process in the release etching process of manufacturing the CMOS infrared sensing structure. A column-level analog front-end circuit obtains two paths of currents according to the first bias voltage and the second bias voltage, performs transimpedance amplification on the difference between the two paths of generated currents and outputs the amplified current as an output voltage. USE - CMOS infrared detector for use in monitoring market, vehicle and auxiliary market, home market, smart manufacturing market, and mobile phone application. ADVANTAGE - The detector has high performance, low pixel scale, high yield and better consistency, and improves the structure stability of the infrared detector, thus realizing miniaturization of the detector and reducing the preparation difficulty. The detector realizes smaller size and thinner film thickness of the characteristic structure, so that the detector duty ratio is larger, the thermal conductivity is lower, the heat capacity is smaller and the detection sensitivity is higher, the detection distance is more far, thus improving the detection performance. The detection sensitivity of infrared detector is high, the detector pixel size is smaller, and the chip area under the same array pixel is more beneficial for realizing chip size reduction. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an infrared detector pixel. CMOS measuring circuit system (1) CMOS infrared sensing structure (2) Closed release isolation layer (3) Absorption plate (10) Beam structure (11)