• 专利标题:   Manufacture of graphene involves forming graphene into film on magnesium oxide.
  • 专利号:   JP2012121778-A
  • 发明人:   FUJII K, SATO M
  • 专利权人:   FUJI ELECTRIC CO LTD
  • 国际专利分类:   C01B031/02, C23C016/26
  • 专利详细信息:   JP2012121778-A 28 Jun 2012 C01B-031/02 201244 Pages: 8 Japanese
  • 申请详细信息:   JP2012121778-A JP275728 10 Dec 2010
  • 优先权号:   JP275728

▎ 摘  要

NOVELTY - Manufacture of graphene (10) involves forming graphene into film on magnesium oxide (111). USE - Manufacture of graphene (claimed). ADVANTAGE - The method economically provides graphene having high mobility and film quality, with reduced impurities. The graphene is directly formed on a transparent insulator board. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of structure of graphene. Graphene (10) Magnesium oxide single-crystal thin film (11) Nickel oxide buffer layer (12) Yttria-stabilized zirconia monocrystal substrate (13) Bulk single crystal (14)