▎ 摘　　要

NOVELTY - Imaging system comprises junction devices arranged in an array, a controller, and a control bus and a readout bus connected between the junction devices and the controller. Each junction device comprises a semiconductor absorber body, a dielectric film of insulating oxide, and a channel layer comprising graphene that overlies the film. The graphene/oxide/semiconductor (GOS) junction is formed in the interface region of each junction device. The junction device further comprises a metallic source electrode (17) and a metallic drain electrode (18) contacting opposing ends of the channel layer. The absorber (10) is backed by back-gate electrode (12) and is overlain by oxide layer (14). The graphene channel (16) is seen overlying the oxide layer. USE - Imaging system for detecting or imaging radiation field using junction devices i.e. deeply depleted graphene-oxide-semiconductor (D2GOS) detector. ADVANTAGE - The detector can be operated with high sensitivity in a manner analogous to a charge coupled device (CCD), but with localized readout from the graphene. The detector has high carrier mobility and broadband photoconductive spectral response. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for detecting radiant energy with at least a first junction device in which a dielectric film of insulating oxide overlies an interface region of a semiconductor absorber body and a channel layer comprising graphene overlies the dielectric film such that a graphene/oxide/semiconductor (GOS) junction is formed, which involves: (a) applying a time-varying back-gate voltage between the channel layer and a back-gate electrode that contacts a side of the semiconductor absorber body opposed to the interface region, where the time-varying back-gate voltage has a voltage waveform that rises in magnitude during a rising period of time at a rate sufficient to drive the interface region into deep depletion, and at one or more sampling times within the rising period of time, while the interface region is in deep depletion; and (b) measuring a change in electrical resistance of the channel layer. DESCRIPTION OF DRAWING(S) - The drawing shows a notional perspective view of a D2GOS device. Absorber (10) Back-gate electrode (12) Oxide layer (14) Graphene channel (16) Metallic source electrode (17) Metallic drain electrode (18)