• 专利标题:   Photocatalytic material with hydrophobic hollow micro-nano structure useful as photocatalyst in sewage treatment, comprises hollow tubular graphitic carbon nitride (g-C3N4) as carrier and supports load tin dioxide quantum dot and nitrogen-doped graphene quantum dots (NGQDs).
  • 专利号:   CN115155637-A, CN115155637-B
  • 发明人:   JING Y, LI Q, REN C, ZHAO H, LEI T, QIAN G, TENG H, XIE C, ZHANG C
  • 专利权人:   CENERTECH TIANJIN CHEM RES DESIGN INST, TIANJIN ZHENGDA TECHNOLOGY CO LTD
  • 国际专利分类:   B01J023/14, B01J027/24, B82Y030/00, B82Y040/00, C02F001/30, C02F101/30, C02F101/34, C02F101/36
  • 专利详细信息:   CN115155637-A 11 Oct 2022 B01J-027/24 202305 Chinese
  • 申请详细信息:   CN115155637-A CN10739845 22 Jun 2022
  • 优先权号:   CN10739845

▎ 摘  要

NOVELTY - Photocatalytic material with hydrophobic hollow micro-nano structure comprises tin dioxide-nitrogen-doped reduced graphene oxide (SnNG) quantum dots (QDs)/graphitic carbon nitride (g-C3N4) photocatalytic material with a hydrophobic hollow micro-nano structure that uses hollow tubular g-C3N4 as a carrier and supports load tin dioxide quantum dot (SnQDs) and nitrogen-doped graphene quantum dots (NGQDs). USE - The photocatalytic material is useful as photocatalyst in sewage treatment (claimed). ADVANTAGE - The photocatalytic material can improve the light absorption ability and the separation rate of photogenerated carriers, so that (SnNG)QDs/gC3N4 has a strong oxidation ability and can treat sewage. The method: prepares hollow tubular gC3N4 by a high-temperature solid-phase method; constructs micron-sized photocatalyst carrier; uses one-step solvothermal method, SnQDs and NGQDs were loaded onto the surface and pores of gC3N4 to obtain photocatalytic material with hydrophobic hollow micro-nano structure loaded with SnQDs and NGQDs, which can prevent the agglomeration of nanostructures. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparation method of the photocatalytic material with hydrophobic hollow micro-nano structure, comprising (i) preparation of hollow tubular g-C3N4: placing melamine under inert gas atmosphere, heating to 400-600°C at a rate of 2-10°C/minute, reacting at constant temperature for 4-12 hours to obtain hollow tubular g-C3N4; and (ii) preparation of (Sn-NG) QDs/g-C3N4: dispersing urea, citric acid, tin(IV) chloride pentahydrate and surfactant in a solvent under stirring condition to obtain mixed solution, adjusting pH to 8-10, then adding hollow tubular g-C3N4 material obtained in the step (i), ultrasonically dispersing for 20-40 minutes, reacting at 200-350°C for 6- 12 hours to obtain solid material, washing, and drying.