• 专利标题:   Method for secondary growth of graphene on metal surface by laser, involves artificially damaging laser primary growth, damaged area, again using nanosecond pulse laser to obtain graphene film of metal surface secondary growth.
  • 专利号:   CN115821204-A
  • 发明人:   YANG Z, WEI M, CHEN M, ZHENG X, QI M, QIANG H, YE X
  • 专利权人:   UNIV SHAANXI SCI TECHNOLOGY
  • 国际专利分类:   C23C014/06, C23C014/28
  • 专利详细信息:   CN115821204-A 21 Mar 2023 C23C-014/06 202327 Chinese
  • 申请详细信息:   CN115821204-A CN11477584 23 Nov 2022
  • 优先权号:   CN11477584

▎ 摘  要

NOVELTY - The method involves presetting a graphite powder layer on a surface of a metal substrate. The graphene film layer is irradiated by a nanosecond pulse laser to obtain a graphene film grown at one time. Carbon atoms rich in the remaining carbon atoms is dissolved to form solid solution with carbon. A laser primary growth of the graphene sheet is artificially damaged. The nanosecond pulse laser is utilized to damage the damaged zone to obtain a graphene layer grown on a metal surface. USE - Method for secondary growth of a graphene film on a metal surface by laser. ADVANTAGE - The method improves anti-friction wear performance of the metal material, prolongs service life of the metal material, reduces economic cost and provides theoretical basis and experience guidance for upgrading and improving the mechanical system component. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene film.