▎ 摘　　要

NOVELTY - The device has a mesa structure (210) that is provided on other mesa structure formed of carbon-containing graphene precursor material having length differs from length of structure provided on substrate (200). The continuous and planar sidewall surface (214) is formed of varying height dimension and length dimension. A graphene layer (220) is provided on sidewall surface with varying width dimension and length dimension corresponding to varying height dimension and length dimension of surface. A fin-FET is provided in contact with layer. USE - Sidewall graphene device for three-dimensional electronics. ADVANTAGE - Since the graphene layer is provided on sidewall surface with varying width dimension and length dimension corresponding to varying height dimension and length dimension of surface, the narrow stripe material can be formed easily in effective manner. The three-dimensional structures can be formed into a wide variety of different device structures. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the graphene based fin-FET utilizing sidewall graphene layer. Substrate (200) Mesa structure (210) Sidewall surface (214) Graphene layer (220) Source structure (230)