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  • 专利标题:   Manufacture of semiconductor structure used as device channels, involves forming silicon carbide fin having at least bare sidewalls on surface of substrate, forming graphene nanoribbon on each bare sidewall of silicon carbide fin.
  • 专利号:   US2014051217-A1, US9093507-B2
  • 发明人:   COHEN G M, DIMITRAKOPOULOS C D, GRILL A
  • 专利权人:   INT BUSINESS MACHINES CORP
  • 国际专利分类:   H01L021/28, H01L029/66, B82Y010/00, B82Y040/00, B82Y099/00, H01L029/06, H01L029/10, H01L029/16, H01L029/775, H01L029/78, H01L051/00, H01L051/05
  • 专利详细信息:   US2014051217-A1 20 Feb 2014 H01L-029/66 201416 Pages: 27 English
  • 申请详细信息:   US2014051217-A1 US064791 28 Oct 2013
  • 优先权号:   US088766, US064791

▎ 摘　　要

NOVELTY - A silicon carbide fin having at least bare sidewalls is provided on a surface of a substrate, and a graphene nanoribbon is formed on each bare sidewall of silicon carbide fin. The graphene nanoribbon is formed and annealed at 1200 degrees C beyond the melting point of substrate and at least a gate structure is formed adjacent graphene nanoribbon, to obtain semiconductor structure. USE - Manufacture of semiconductor structure used as device channels. ADVANTAGE - The semiconductor structure is efficiently manufactured with excellent electronic property. DESCRIPTION OF DRAWING(S) - The drawing shows the top down view of manufacture of semiconductor structure after forming silicon carbide fins. Buried insulating layer (14) Hard mask (30) Patterned hard mask (30')