▎ 摘　　要

NOVELTY - Preparing large area high quality graphene film with uniform number of layer comprises e.g. using 2-naphthol as solid carbon source, and directly preparing graphene film by magnetron sputtering technique and chemical vapor deposition (CVD) technique on a desired substrate, the method specifically comprises mixing piranha solution with concentrated sulfuric acid, soaking the silicon substrate in piranha solution, ultrasonically cleaning silicon substrate using acetone, absolute ethyl alcohol and deionized water, dissolving solid carbon source 2-naphthol and 1-octyl phosphonic acid in chloroform, spin coating solid carbon source that has been dissolved in choloroform on the surface of a clean silicon substrate using a magnetic stirring, preparing copper film prepared by a radio frequency magnetron sputtering process on the surface of the substrate after spin coating the carbon surface, and depositing the sputtered substrate into chemical vapor deposition to grow graphene. USE - The method is useful for preparing large area high quality graphene film with uniform number of layer. ADVANTAGE - The method: improves forming quality of graphene film; and is simple and convenient to control, and suitable for daily test and production. DETAILED DESCRIPTION - Preparing large area high quality graphene film with uniform number of layer comprises using 2-naphthol as solid carbon source, directly preparing graphene film by magnetron sputtering technique and chemical vapor deposition technique on a desired substrate, the method specifically comprises mixing piranha solution with concentrated sulfuric acid with 98% purity with 30% hydrogen peroxide in a mass ratio of 7:3, soaking the silicon substrate in piranha solution, ultrasonically cleaning silicon substrate using acetone, absolute ethyl alcohol and deionized water, dissolving solid carbon source 2-naphthol and 1-octyl phosphonic acid in chloroform, spin coating solid carbon source that has been dissolved in choloroform on the surface of a clean silicon substrate using a magnetic stirring, preparing copper film prepared by a radio frequency magnetron sputtering process on the surface of the substrate after spin coating the carbon surface, and depositing the sputtered substrate into chemical vapor deposition to grow graphene.