▎ 摘　　要

NOVELTY - The semiconductor device (13) has a graphene electrode (2), which is formed in a two dimensional structure. A boron nitride semiconductor layer (5) is coupled with a graphene end of the graphene electrode. The graphene electrode is provided on both sides of the boron nitride semiconductor layer. The graphene electrode is used as a source electrode and a drain electrode. A transistor (6) is used as a channel in the boron nitride semiconductor layer. USE - Semiconductor device. ADVANTAGE - The semiconductor device has a graphene electrode, which is formed in a two dimensional structure, where a boron nitride semiconductor layer is coupled with the graphene end of the graphene electrode, and hence ensures reliable and improved semiconductor device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic top view of a semiconductor device. (Drawing includes non-English language text). Graphene electrode (2) Boron nitride semiconductor layer (5) Transistor (6) Substrate (7) Semiconductor device (13)