▎ 摘　　要

NOVELTY - Photomask 200 comprises substrate 210, and polymer layer over a surface of the substrate, where the polymer layer comprises thermoplastic polymer and hydrophobic layer. The thermoplastic polymer is set between hydrophobic layer and surface of the photomask. USE - Photomask used in semiconductor industry. ADVANTAGE - The photomask has thermoplastic layer comprising polymer having a crystalline-non crystalline conversion temperature in a range of 50-60℃, and improved efficiency of recovering scratches. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for fabricating a semiconductor structure with an extreme ultraviolet (EUV) photomask, which involves: (1) placing a substrate over a supporter; (2) forming a layer over the substrate; and (3) patterning the layer with an actinic radiation reflected off an EUV photomask, where a protective film is disposed on the EUV photomask, and the protective film comprises a thermoplastic polymer and hydrophobic layer, where thermoplastic polymer is between the hydrophobic layer and surface of the photomask. DESCRIPTION OF DRAWING(S) - The drawing shows front perspective view of a photomask. 200Photomask 200aFront side 210Substrate 215Patterned layer 222Protection layer