▎ 摘　　要

NOVELTY - Growing graphene on silicon carbide (SiC) substrate epitaxially, involves adopting the preparation technology imaging SiC substrate; on the surface of the SiC substrate, forming graphic array, performing thermal decomposition to patterned SiC substrate, and forming graphene on the surface of the SiC substrate. The method also involves prior to etching the SiC substrate, the SiC substrate to clean the surface of the step, and etching the SiC substrate to thermal decomposition before the step of cleaning the surface of the SiC substrate. USE - For growing graphene on SiC substrate epitaxially; and for preparing graphene device (claimed). ADVANTAGE - The method obtains high-quality graphene in a continuous, even and wrinkle free manner.