▎ 摘　　要

NOVELTY - The method involves transferring graphene to silicon dioxide substrate from other substrates. The graphene thin film is patterned according to the desired shape. A layer of silicon dioxide film is deposited on the graphene layer. An image of the graphene is transferred to the silicon dioxide substrate after etching the silicon dioxide film by etching solution. The corrosion of silicon dioxide film is etched by the hydrofluoric acid solution. USE - Silicon dioxide pattern processing method. ADVANTAGE - Silicon dioxide pattern processing can be performed at low cost. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical view illustrating the silicon dioxide pattern processing method.