• 专利标题:   Composite transparent electric conduction electrode LED chip, has gallium nitride buffer layer formed with quantum trap layer, and graphene composite transparent electrode layer matched with graphene layered thin film.
  • 专利号:   CN204271122-U
  • 发明人:   HAO R, LIU Y, WANG B, LI F, LUO Z, XU D, YI H
  • 专利权人:   GUANGDONG DELI PHOTOELECTRIC CO LTD
  • 国际专利分类:   H01L033/38, H01L033/42
  • 专利详细信息:   CN204271122-U 15 Apr 2015 H01L-033/38 201541 Pages: 7 Chinese
  • 申请详细信息:   CN204271122-U CN20797895 17 Dec 2014
  • 优先权号:   CN20797895

▎ 摘  要

NOVELTY - This new utility model claims of one composite transparent electric conduction electrode of the LED chip, comprising gallium nitride buffer layer, N-GaN layer, quantum trap layer, P-GaN layer and composite transparent electrode orderly grow on substrate of the layer, wherein the N-GaN layer of manufacture with n type electrode, on the graphene layer composite transparent electrode layer and manufacturing with p-type electrode, the composite transparent electrode layer of stratiform film and growing graphene on the ZnO nano bar on graphene stratiform composite thin film, too introduction of manufacturing method of the chip. This utility model of new formation of graphene stratiform film /ZnO nano rod composite transparent electrode layer, comprising anti-cracking, it is easy to penetrate and light performance is good, make contact property of chip, electric current expansion property and transmittance can be obtained and increase greatly, and can be greatly reducing production cost of follow-up core technology.