▎ 摘　　要

NOVELTY - The device has a main portion which is provided with a substrate (1). The graphene nanometer belt (2) is provided on the substrate. The ends of the graphene nanometer belt are respectively fixed with electrodes (3). The direct current bias voltage is generated at terahertz frequency range. The direct current power supply unit (4) is adapted to apply the high frequency direct current bias voltage on the ends of graphene nanometer belt, so as to generate terahertz wave. USE - Terahertz wave generating device with graphene nanometer belt. ADVANTAGE - The direct current bias voltage can be applied to the graphene nanometer belt, so as to generate the terahertz wave. Greater terahertz gain can be achieved. The graphene nanometer belt can be operated and integrated easily. The flexibility of the belt can be improved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of the terahertz wave generating device. Substrate (1) Graphene nanometer belt (2) Electrode (3) Direct current power supply unit (4) Graphene nanometer belt length (5)