▎ 摘　　要

NOVELTY - A two-dimensional metal thin film-based graphene resonance gas sensor preparing method involves cleaning the surface of the silicon substrate, spin-coating polyphosphoric acid on the silicon substrate, etching a rectangular groove and depositing a layer of titanium material in the rectangular groove. The silicon dioxide dielectric layer is deposited on the surface of the silicon substrate, followed by wrapping the gate metal electrode inside the silicon dioxide dielectric layer, preparing a single-layer graphene film, etching a nanopore in the middle position of the graphene film, filling a layer of metal material in nanopores, and processing, spin coating polyphosphoric acid on the device, depositing a layer of titanium material in the rectangular groove, putting into hydrofluoric acid solution, and etching the silicon dioxide dielectric layer to form a resonance channel, which is salvaged, washed, prepared a mask plate and modified the polymer coating to obtain the finished product. USE - Method for preparing two-dimensional metal thin film-based graphene resonance gas sensor. ADVANTAGE - The method enables preparing the two-dimensional metal thin film-based graphene resonance gas sensor with effectively realizing the connection between the catalyst and the graphene resonant beam through chemical bonding, overcoming the problem of insecure connection between the catalyst and the graphene resonant beam and improving the quality problem of the graphene resonant gas sensor. DETAILED DESCRIPTION - A two-dimensional metal thin film-based graphene resonance gas sensor preparing method involves ultrasonically cleaning the surface of the silicon substrate using anhydrous ethanol and deionized water, spin-coating polyphosphoric acid on the silicon substrate, etching a rectangular groove on the polyphosphoric acid by using a nano three-dimensional structure direct writing machine, depositing a layer of titanium material in the rectangular groove by the electron beam evaporation method, depositing another layer of gold-platinum alloy material, after completing the deposition, removing the remaining polyphosphoric acid using a nano three-dimensional structure direct write machine, and utilizing the obtained metal block as the gate metal electrode. The silicon dioxide dielectric layer is deposited on the surface of the silicon substrate by a chemical vapor deposition method, followed by completely wrapping the gate metal electrode inside the silicon dioxide dielectric layer, preparing a single-layer graphene film by a chemical vapor deposition method, etching a nanopore in the middle position of the graphene film by a focused ion beam, filling a layer of metal material in the nanopores by the electron beam evaporation method, and processing in a holding furnace to form a two-dimensional metal film in the graphene film, cutting the required size of the graphene resonance beam by focused ion beam, locating the two-dimensional metal thin film at the center of the graphene resonance beam, transferring the graphene resonance beam to the silicon dioxide dielectric layer by a wet transfer method, so that the two-dimensional metal thin film in the graphene resonance beam is directly above the gate metal electrode and the two ends of the graphene resonance beam are symmetrical with respect to the gate metal electrode, spin coating polyphosphoric acid on the device, etching two rectangular grooves of the same size on the polyphosphoric acid by using a nano three-dimensional structure direct writing machine, depositing a layer of titanium material in the rectangular groove by the electron beam evaporation method, and depositing a layer of gold-platinum alloy material, removing the remaining polyphosphoric acid by using a nano three-dimensional structure direct writing machine, sequentially utilizing the two metal blocks as a source metal electrode and a drain metal electrode, spin-coating polyphosphoric acid on the device again, and etching a rectangular groove on the polyphosphoric acid by using a nano three-dimensional structure direct writing machine, putting the resulting device into a hydrofluoric acid solution at normal temperature, and etching the silicon dioxide dielectric layer at the bottom of the rectangular groove to form a resonance channel. The resonance channel is salvaged from the hydrofluoric acid solution, washed in clean water, and removed the remaining direct write adhesive polyphosphoric acid on the obtained device by a nano three-dimensional structure direct write machine, prepared a mask plate, etched one end of the gate metal electrode by photolithography, and etched away the silicon dioxide dielectric layer above it, modified the polymer coating on the two-dimensional metal film of the graphene resonance beam to obtain the finished product.