▎ 摘　　要

NOVELTY - This utility model aims at providing a kind of graphene field effect transistor, comprising a substrate, a gate dielectric layer, the gate dielectric layer h-BN material, a source electrode, a drain electrode and a gate electrode, the peak top gate medium layer and a gate dielectric layer of graphene channel layer, h-BN materials are respectively located on the upper part and lower part of the graphene channel layer, the substrate with a gate dielectric layer, a source electrode and a drain electrode are respectively located at the two ends of the graphene channel layer, a top gate electrode on top of the gate dielectric layer. Microwave and radio frequency characteristic of the utility model is graphene field effect transistor.