• 专利标题:   Synthesizing reduced graphene oxide (rGO)/dysprosium selenide film on solid substrate used in energy storage device, comprises immersing substrate in rGO aqueous solution, dysprosium nitrate and sodium selenosulfate to form film.
  • 专利号:   IN202221021506-A, IN433033-B
  • 发明人:   LOKHANDE C D, KHOT S D, NIKAM R P, BAGWADE P P, MALAVEKAR D B
  • 专利权人:   UNIV DY PATIL EDUCATION SOC DEEMED
  • 国际专利分类:   B01J019/12, C01B032/194, C01B032/198, C01B032/23, H01G011/36
  • 专利详细信息:   IN202221021506-A 15 Jul 2022 C01B-032/198 202274 Pages: 19 English
  • 申请详细信息:   IN202221021506-A IN21021506 11 Apr 2022
  • 优先权号:   IN21021506

▎ 摘  要

NOVELTY - Synthesizing reduced graphene oxide (rGO)/dysprosium selenide film on solid substrate, comprises immersing substrate in an aqueous solution of rGO, dysprosium nitrate and sodium selenosulfate to form rGO/dysprosium selenide film on the surface of the substrate for 60-240 minutes, where the concentration of dysprosium nitrate is 0.05-0.1 M, the concentration of sodium selenosulfate is 0.05-0.15 M, the number of deposition cycles are 100-300, the pH of the cationic solution is 3-5 and pH of the anionic solution is 9-11, and the temperature of anionic precursor varies between 300-350 K. USE - The method is useful for synthesizing rGO/dysprosium selenide film on solid substrate, which is useful in electrochemical energy storage device with specific capacitance of 301 F/g (claimed), water splitting, solar cells, gas sensors and supercapacitors. ADVANTAGE - The method: produces thin film using chemical deposition method and by optimizing preparative parameters of successive ionic layer adsorption and reaction (SILAR) method; utilizes rGO which is introduced due to its unique properties like layer structure, higher conductivity, high theoretical specific surface area greater than 1000 m2/g), and excellent mechanical strength which enhances the super capacitive performance of composite thin films; and adopts SILAR process, which is: (1) an automated unit, this needs just to clamp the substrate into the holder and program the controller with required dip cycles and duration; (2) is user friendly, cost-effective, and convenient method to obtain coating of various inorganic materials, and the thickness of material can be easily controlled by manipulating various preparative parameters e.g. temperature, dipping time, drying time, number of cycles, concentrations and pH of initial precursors; (3) can work at room temperature and is convenient to obtain a large area coating of material; (4) material wastage is minimized compared with physical resistive heating and sputtering methods; (5) allows binder-free synthesis and large-scale deposition capability on various kinds of substrates; and (6) variety of nanostructures can be easily produced on the surface of coating material.