▎ 摘　　要

NOVELTY - Producing graphene, comprises: (a) providing a substrate containing a material having a carbon solubility of at least 10-6 at.% at the temperature of the stage; with (b) providing a gas containing carbon monoxide (II); (c) bringing the gas into contact with the substrate and keeping it at a temperature of 600-2000 degrees C to obtain graphene on the substrate surface. USE - The method is useful for producing graphene. ADVANTAGE - The method: provides monolayer single-crystal graphene with low number of defects using reproducible and highly scalable method; produces graphene that is easy to transfer, scale up and implement on industrial scale; and produces graphene that would provide high rate of production of graphene and would provide graphene of high quality, preferably with low number of defects, mainly predominantly single-layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene characterized in that the ratio of the 2D peak intensity to the G peak intensity in Raman spectrum is at least 2, and the ratio of the area under the G peak to the area under the D peak in it Raman spectrum is not greater than 0.02.