• 专利标题:   Composition for controlled growth of graphene monolayers on a metal oxide surface, comprises a substrate, a metal oxide formed on the substrate, and graphene formed on the metal oxide.
  • 专利号:   WO2013010060-A1, US2014212671-A1
  • 发明人:   JEFFRY K, KELBER J
  • 专利权人:   UNIV NORTH TEXAS, KELBER J
  • 国际专利分类:   G11B005/64, C01B031/04, C30B023/06, H01L043/10
  • 专利详细信息:   WO2013010060-A1 17 Jan 2013 G11B-005/64 201308 Pages: 20 English
  • 申请详细信息:   WO2013010060-A1 WOUS046621 13 Jul 2012
  • 优先权号:   US507722P, US521600P, US14232652

▎ 摘  要

NOVELTY - A composition comprises a substrate, a metal oxide formed on the substrate, and graphene (10 ml) formed on the metal oxide. USE - As composition for controlled growth of graphene monolayers on a metal oxide surface, used in semiconductor logic device or spintronic device (claimed). ADVANTAGE - The graphene monolayers are continuous, well ordered and in registry with each other. The graphene lacks a significant band gap. The method enables growth of up to three, four, five or even six-ten monolayers of graphene on similar important metal oxides including nickel oxide, cobalt oxide and chromium oxide. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for controlled growth of graphene monolayers on a metal oxide surface, involving depositing carbon on a surface of the metal oxide by molecular beam epitaxy of carbon for a period of time sufficient to grow the graphene monolayers.