• 专利标题:   Manufacturing substrate graphene growth involves taking substrate and then feeding carbon-containing feed gas through electron cyclotron resonance microwave plasma enhanced chemical vapor deposition.
  • 专利号:   KR2016059154-A
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2016059154-A 26 May 2016 C01B-031/04 201640 Pages: 69 English
  • 申请详细信息:   KR2016059154-A KR160651 18 Nov 2014
  • 优先权号:   KR160651

▎ 摘  要

NOVELTY - Substrate graphene growth manufacturing involves taking substrate and then feeding carbon-containing feed gas through electron cyclotron resonance microwave plasma enhanced chemical vapor deposition (ECR-CVD). Hydrocarbon radical is applied on substrate surface by applying van der Waals force. USE - Method for manufacturing substrate graphene growth. ADVANTAGE - The method manufactures the substrate graphene growth in a simple and cost-effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an apparatus for manufacturing substrate graphene growth, which includes a heater and substrate.