▎ 摘　　要

NOVELTY - Graphene patterning method with low cost and large area involves depositing a layer of aluminum metal as a mask on the surface of the substrate (1) to which the graphene film (2) is transferred, spin-coating a layer of photoresist and photoetching to pattern an aluminum metal mask (6), etching the graphene, cleaning the residual photoresist and etching the residual aluminum metal mask. USE - Graphene patterning method with low cost and large area used in semiconductor processing of sensors and high performance transistors. ADVANTAGE - The method uses metal mask to separate graphene from photoresist, avoids the graphene and photoresist directly contact by photoresist residue. The obtained graphene surface is more clean and consistent. In large area graphene, clean and consistent surface ensures the consistency of electricity and mechanical property, and is suitable for large-area graphene patterning. The aluminum metal material used as the mask material, the material cost is low, and the additional material cost in large-area graphene patterning is limited. The method is simple, cost-effective, and does not damage the graphene surface. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the patterned metal mask. 1Substrate 2Graphene film 5Photoresist image 6Aluminum metal mask pattern