▎ 摘　　要

NOVELTY - Preparing three-dimensional homogeneous epitaxial structure, involves (a) covering a two-dimensional material layer on surface of nitride single crystal substrate, and processing one micro nano-scale blind hole on the surface of the two-dimensional material layer, (b) growing group III nitride material on the two-dimensional material layer under first growth condition to form column of micro-nano scale, extending column along direction of forming an included angle of 0-180° with the surface of the two-dimensional material layer, and each of the column bottom is filled in the corresponding blind hole, and exposing top end on the surface of the two-dimensional material layer, (c) growing group III nitride material on twodimensional material layer under second growth condition, so as to form a threedimensional coating layer on each of the column body, so as to form a three-dimensional homogeneous epitaxial structure. USE - Method for preparing three-dimensional homogeneous epitaxial structure used in preparation of optoelectronic device or electronic device (claimed). ADVANTAGE - The method realizes self-separation of multiple three-dimensional homoepitaxial structures, and reuses nitride single crystal substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a three-dimensional homoepitaxial structure, which comprises: one pillar of micro-nano scale, each of which is arranged on a two-dimensional material layer, and extending along a direction forming an angle from 0-180° with the surface of the two-dimensional material layer. The surface of the two-dimensional material layer is distributed with one blind hole of micro-nano scale. The bottom end of each column is filled in a corresponding blind hole, and the top end protrudes from the surface of the two-dimensional material layer. The three-dimensional wrapping layer is wrapped on a corresponding column, and two adjacent three-dimensional wrapping layers are arranged at intervals from each other. The pillars and the three-dimensional wrapping layer are both formed of Group III nitride materials.